plastic medium-power complementary silicon transistors . . . designed for generalpurpose amplifier and lowspeed switching applications. ? high dc current gain e h fe = 2500 (typ) @ i c = 4.0 adc ? collectoremitter sustaining voltage e @ 100 madc v ceo(sus) = 60 vdc (min) e tip120, tip125 = 80 vdc (min) e tip121, tip126 = 100 vdc (min) e tip122, tip127 ? low collectoremitter saturation voltage e v ce(sat) = 2.0 vdc (max) @ i c = 3.0 adc = 4.0 vdc (max) @ i c = 5.0 adc ? monolithic construction with builtin baseemitter shunt resistors ? to220ab compact package ???????????????????????? *maximum ratings ??????????? ? ????????? ? ??????????? rating ???? ? ?? ? ???? symbol ??? ? ? ? ??? tip120, tip125 ???? ? ?? ? ???? tip121, tip126 ???? ? ?? ? ???? tip122, tip127 ??? ? ? ? ??? unit ??????????? ??????????? collectoremitter voltage ???? ???? v ceo ??? ??? 60 ???? ???? 80 ???? ???? 100 ??? ??? vdc ??????????? ??????????? collectorbase voltage ???? ???? v cb ??? ??? 60 ???? ???? 80 ???? ???? 100 ??? ??? vdc ??????????? emitterbase voltage ???? v eb ????????? 5.0 ??? vdc ??????????? ? ????????? ? ??????????? collector current e continuous peak ???? ? ?? ? ???? i c ????????? ? ??????? ? ????????? 5.0 8.0 ??? ? ? ? ??? adc ??????????? ??????????? base current ???? ???? i b ????????? ????????? 120 ??? ??? madc ??????????? ??????????? total power dissipation @ t c = 25 c derate above 25 c ???? ???? p d ????????? ????????? 65 0.52 ??? ??? watts w/ c ??????????? ? ????????? ? ??????????? total power dissipation @ t a = 25 c derate above 25 c ???? ? ?? ? ???? p d ????????? ? ??????? ? ????????? 2.0 0.016 ??? ? ? ? ??? watts w/ c ??????????? ??????????? unclamped inductive load energy (1) ???? ???? e ????????? ????????? 50 ??? ??? mj ??????????? ??????????? operating and storage junction, temperature range ???? ???? t j , t stg ????????? ????????? 65 to + 150 ??? ??? c ???????????????????????? ???????????????????????? thermal characteristics ????????????? ????????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ????????????? ????????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 1.92 ??? ??? c/w ????????????? ????????????? thermal resistance, junction to ambient ????? ????? r q ja ?????? ?????? 62.5 ??? ??? c/w (1) i c = 1 a, l = 100 mh, p.r.f. = 10 hz, v cc = 20 v, r be = 100 w . preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 5 1 publication order number: tip120/d tip120 tip121 tip122 tip125 tip126 tip127 darlington 5 ampere complementary silicon power transistors 6080100 volts 65 watts *on semiconductor preferred device * npn pnp * * * case 221a09 to220ab * * style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
tip120 tip121 tip122 tip125 tip126 tip127 http://onsemi.com 2 80 0 0 20 40 60 80 100 120 160 figure 1. power derating t, temperature ( c) p d , power dissipation (watts) 40 20 60 140 t c 4.0 0 2.0 1.0 3.0 t a t a t c
tip120 tip121 tip122 tip125 tip126 tip127 http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 100 madc, i b = 0) tip120, tip125 tip121, tip126 tip122, tip127 ????? ? ??? ? ? ??? ? ????? v ceo(sus) ??? ? ? ? ? ? ? ??? 60 80 100 ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) tip120, tip125 (v ce = 40 vdc, i b = 0) tip121, tip126 (v ce = 50 vdc, i b = 0) tip122, tip127 ????? ? ??? ? ? ??? ? ????? i ceo ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 0.5 0.5 0.5 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 60 vdc, i e = 0) tip120, tip125 (v cb = 80 vdc, i e = 0) tip121, tip126 (v cb = 100 vdc, i e = 0) tip122, tip127 ????? ? ??? ? ? ??? ? ????? i cbo ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 0.2 0.2 0.2 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? e ???? ? ?? ? ???? 2.0 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 0.5 adc, v ce = 3.0 vdc) (i c = 3.0 adc, v ce = 3.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 1000 1000 ???? ? ?? ? ???? e e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 3.0 adc, i b = 12 madc) (i c = 5.0 adc, i b = 20 madc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 2.0 4.0 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 3.0 adc, v ce = 3.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 2.5 ??? ? ? ? ??? vdc ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? smallsignal current gain (i c = 3.0 adc, v ce = 4.0 vdc, f = 1.0 mhz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 4.0 ???? ? ?? ? ???? e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz tip125, tip126, tip127 tip120, tip121, tip122 ????? ? ??? ? ? ??? ? ????? c ob ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 300 200 ??? ? ? ? ? ? ? ??? pf (1) pulse test: pulse width 300 m s, duty cycle 2%. figure 2. switching times test circuit 5.0 0.1 figure 3. switching times i c , collector current (amp) t, time (s) m 2.0 1.0 0.5 0.05 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 0.3 0.7 pnp npn t f t r t s t d @ v be(off) = 0 v 2 approx +8.0 v v 1 approx -12 v t r , t f 10 ns duty cycle = 1.0% 25 m s 0 r b 51 d 1 +4.0 v v cc -30 v r c tut 8.0 k 120 scope for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities. r b & r c varied to obtain desired current levels d 1 must be fast recovery type, eg: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c 3.0 0.2 0.1 0.07 5.0 7.0
tip120 tip121 tip122 tip125 tip126 tip127 http://onsemi.com 4 figure 4. thermal response t, time (ms) 1.0 0.01 0.01 0.5 0.2 0.1 0.05 0.02 r(t), transient thermal resistance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k 500 z q jc(t) = r(t) r q jc r q jc = 1.92 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 20 1.0 figure 5. activeregion safe operating area v ce , collector-emitter voltage (volts) 10 5.0 2.0 1.0 0.02 2.0 5.0 20 50 100 bonding wire limited thermally limited @ t c = 25 c (single pulse) 0.5 i c , collector current (amp) t j = 150 c dc 1ms 100 m s 0.2 0.1 10 0.05 second breakdown limited curves apply below rated v ceo 5ms 3.0 7.0 30 70 tip120, tip125 tip121, tip126 tip122, tip127 500 m s there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown 300 0.1 v r , reverse voltage (volts) 30 2.0 5.0 10 20 100 50 0.2 0.5 1.0 c, capacitance (pf) 100 50 t j = 25 c c ib 70 c ob pnp npn figure 6. smallsignal current gain 10,000 1.0 f, frequency (khz) 10 20 50 100 200 1000 2.0 5.0 10 3000 500 100 t c = 25 c v ce = 4.0 vdc i c = 3.0 adc 1000 pnp npn figure 7. capacitance 50 500 h fe , small-signal current gain 5000 2000 300 200 30 20 200
tip120 tip121 tip122 tip125 tip126 tip127 http://onsemi.com 5 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 20,000 0.1 figure 8. dc current gain i c , collector current (amp) 200 0.2 0.3 0.5 1.0 2.0 10 500 1000 300 h fe , dc current gain 2000 3000 v ce = 4.0 v 0.7 3.0 npn tip120, tip121, tip122 pnp tip125, tip126, tip127 figure 9. collector saturation region 3.0 0.3 i b , base current (ma) 1.0 0.5 1.0 2.0 10 30 1.8 i c = 2.0 a t j = 25 c 4.0 a 2.2 2.6 0.7 5.0 3.0 0.1 i c , collector current (amp) 0.2 0.3 0.5 1.0 2.0 5.0 10 2.5 2.0 1.5 1.0 0.5 t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v, voltage (volts) figure 10. aono voltages v be @ v ce = 4.0 v 3.0 10,000 5000 t j = 150 c 25 c -55 c 20 i c , collector current (amp) h fe , dc current gain v ce = 4.0 v t j = 150 c 25 c -55 c 1.4 6.0 a i b , base current (ma) t j = 25 c i c , collector current (amp) v, voltage (volts) t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v be @ v ce = 4.0 v 5.0 7.0 20,000 0.1 200 0.2 0.3 0.5 1.0 2.0 10 500 1000 300 2000 3000 0.7 3.0 10,000 5000 5.0 7.0 7000 700 3.0 7.0 3.0 0.3 1.0 0.5 1.0 2.0 10 30 1.8 2.2 2.6 0.7 5.0 20 1.4 3.0 7.0 i c = 2.0 a 4.0 a 6.0 a 0.7 7.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 5.0 10 2.5 2.0 1.5 1.0 0.5 3.0 0.7 7.0
tip120 tip121 tip122 tip125 tip126 tip127 http://onsemi.com 6 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
tip120 tip121 tip122 tip125 tip126 tip127 http://onsemi.com 7 notes
tip120 tip121 tip122 tip125 tip126 tip127 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. tip120/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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